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| CHA5293A RoHS COMPLIANT 17-24GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5293A is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vd1 Vd2 Vg3 Vd3 Vg1,2 Vd2 25 20 15 10 5 0 -5 -10 -15 -20 12 14 16 18 20 Vg3 Vd3 Main Features Wide band : 17-24GHz 31dBm output power @ 1dB comp. gain 18 dB 1dB gain DC power consumption, 800mA @ 6V Chip size : 4.01 x 2.52 x 0.05 mm Gain & RLoss (dB) S22 S11 22 24 26 28 Frequency (GHz) Typical on jig Measurements Main Characteristics Tamb. = 25 C Symbol Fop G P1dB Id Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Bias current Min 17 17 30 Typ 18 31 800 Max 24 Unit GHz dB dBm mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA5293A6354 - 20 Dec 06 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5293A Electrical Characteristics Tamb = +25 Vd = 6V Id #800mA C, Symbol Fop G G Is P1dB P03 IP3 PAE VSWRin 17-24GHz High Power Amplifier Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation Pulsed output power at 1dB compression (1) Output power at 3dB gain compression (1) 3rd order intercept point (2) Power added efficiency at 1dB comp. Input VSWR (2) Min 17 17 Typ Max 24 Unit GHz dB dB dB dBm dBm dBm % 18 1 50 30 32 31 33 42 20 3:1 3:1 155 800 1000 VSWRout Output VSWR (2) Tj Id Junction temperature for 80 backside C Bias current @ small signal C mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement. Absolute Maximum Ratings Tamb. = 25 (1) C Symbol Vd Id Vg Ig Vgd Pin Tch Ta Tstg Parameter Maximum drain bias voltage with Pin max=12dBm Maximum linear drain bias current Gate bias voltage Gate bias current Minimum negative gate drain voltage ( Vg - Vd) Maximum input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range Values 6.25 1450 -2.5 to +0.4 -5 to +5 -8 15 175 -40 to +80 -55 to +125 Unit V mA V mA V dBm C C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA5293A6354 - 20 Dec 06 2/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-24GHz High Power Amplifier Typical on Jig Measurements ( including 1dB loss for the gain) Bias conditions: Vd=6V, Vg tuned for Id = 800mA 25 20 15 CHA5293A Gain & RLoss (dB) 10 5 0 -5 -10 -15 -20 12 14 16 18 20 22 24 26 28 S22 S11 Frequency (GHz) Linear Gain & Return Losses versus frequency 37 35 33 31 29 27 25 23 21 19 17 15 13 11 17 18 19 20 21 22 23 24 frequency (GHz) Linear Gain (dB) Output power @ 3dB comp. Output power @ 1dB comp. PAE@ 1dB comp. Linear Gain, Ouput power@ 1dB & 3dB compression, PAE@ 1dB comp. Ref. : DSCHA5293A6354 - 20 Dec 06 3/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5293A 86 82 78 74 70 66 62 58 54 50 46 42 38 34 30 5 6 7 8 17-24GHz High Power Amplifier F=18GHz F=10MHz C/ I3 (dBc) C/ I5 (dBc) 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) C/I3 & C/I5 versus DCL* output power @ 18GHz 86 82 78 74 70 66 62 58 54 50 46 42 38 34 30 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 F=20GHz F=10MHz C/ I3 (dBc) C/ I5 (dBc) Output Power (dBm) C/I3 & IP3 versus DCLoutput power @ 20GHz *DCL: Double Carrier Level Ref. : DSCHA5293A6354 - 20 Dec 06 4/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-24GHz High Power Amplifier 86 82 78 74 70 66 62 58 54 50 46 42 38 34 30 5 6 7 8 CHA5293A F=21.5GHz F=10MHz C/ I3 (dBc) C/ I5 (dBc) 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) C/I3 & IP3 versus DCL* output power @ 21.5GHz 86 82 78 74 70 66 62 58 54 50 46 42 38 34 30 5 6 7 F=23.5GHz F=10MHz C/ I3 (dBc) C/ I5 (dBc) 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) C/I3 & IP3 versus DCL output power @ 23.5GHz *DCL: Double Carrier Level Ref. : DSCHA5293A6354 - 20 Dec 06 5/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5293A 17-24GHz High Power Amplifier Chip Assembly and Mechanical Data To Vd1,Vd2 DC Drain supply feed To Vd3 DC Drain supply feed To Vg1,2,3 DC Gate supply feed Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered. Ref. : DSCHA5293A6354 - 20 Dec 06 6/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-24GHz High Power Amplifier CHA5293A Bonding pad positions. ( Chip thickness: 50m. ) Application note Due to 50m thickness, specific care is requested for the handling and assembly. Bias operation sequence: ON: Supply Gate voltage Supply Drain voltage OFF: Cut off Drain voltage Cut off Gate voltage Ref. : DSCHA5293A6354 - 20 Dec 06 7/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5293A 17-24GHz High Power Amplifier Ordering Information Chip form: CHA5293A99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA5293A6354 - 20 Dec 06 8/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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